Electronic properties of grain boundaries in semiconductors
Abstract
The aim of this communication is to describe the main results which we have obtained in the past years on the electronic properties of grain boundaries in semiconductors. The study, experimental as well as theoretical, has focused on the main electronic characteristics i.e. density of states, optical cross sections, carrier capture cross sections (and recombination velocity) from which all the other electronic properties can be derived. The experimental results concern mostly Ge and Si bicrystals although some experiments were performed in poly-Si. Since the results obtained are rather numerous and detailed in publications, here we discuss them briefly, focusing on the leading idea with connects them.
Keywords
defect electron energy states
electron hole recombination
electronic density of states
elemental semiconductors
germanium
optical constants
silicon
semiconductor
grain boundaries
electronic properties
electronic characteristics
density of states
optical cross sections
carrier capture cross sections
recombination velocity
bicrystals
poly Si
Si
Ge
Domains
Physics archives
Origin : Explicit agreement for this submission
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