Microstructural and magnetic study of Fe-implanted 6H-SiC

C. Dupeyrat (1) , A. Declemy (1) , M. Drouet (1) , D. Eyidi (1) , L. Thome (2) , A. Debelle (2) , M. Viret (3) , F. Ott (4)

1 PhyMat - Laboratoire de Physique des Matériaux
2 CSNSM PCI
3 SPEC - UMR3680 - Service de physique de l'état condensé
4 LLB - UMR 12 - Laboratoire Léon Brillouin

Single crystalline 6H-SiC near (0 0 0 1)-oriented p-type samples were co-implanted at 550 degrees C with Fe ions at different energies and fluences ranging from 30 to 160 key and from 2 x 10(15) to 8 x 10(15) ions cm(-2) with the aim to get so-called diluted magnetic semiconductors (DMS). Different treatments for implantation-induced damage recovery and iron incorporation and activation in the SiC matrix have been studied: the effects of rapid thermal annealing (RTA) on microstructure and magnetic properties of Fe-implanted 6H-SiC are compared to those of laser processing in the solid phase. (C) 2009 Elsevier B.V. All rights reserved.

Mots clés: SILICON-CARBIDE; FERROMAGNETISM

Domaines: Science des matériaux [cond-mat.mtrl-sci]

C. Dupeyrat, A. Declemy, M. Drouet, D. Eyidi, L. Thome, et al.. Microstructural and magnetic study of Fe-implanted 6H-SiC. 25th International Conference on Defects in Semiconductors, Jul 2009, St Petersbourg, Russia. pp.4731-4734, ⟨10.1016/j.physb.2009.08.125⟩. ⟨in2p3-00684897⟩