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Conference papers

Microstructural and magnetic study of Fe-implanted 6H-SiC

Abstract : Single crystalline 6H-SiC near (0 0 0 1)-oriented p-type samples were co-implanted at 550 degrees C with Fe ions at different energies and fluences ranging from 30 to 160 key and from 2 x 10(15) to 8 x 10(15) ions cm(-2) with the aim to get so-called diluted magnetic semiconductors (DMS). Different treatments for implantation-induced damage recovery and iron incorporation and activation in the SiC matrix have been studied: the effects of rapid thermal annealing (RTA) on microstructure and magnetic properties of Fe-implanted 6H-SiC are compared to those of laser processing in the solid phase. (C) 2009 Elsevier B.V. All rights reserved.
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Contributor : Christine Hadrossek Connect in order to contact the contributor
Submitted on : Tuesday, April 3, 2012 - 2:28:39 PM
Last modification on : Sunday, June 26, 2022 - 11:55:57 AM



C. Dupeyrat, A. Declemy, M. Drouet, D. Eyidi, L. Thome, et al.. Microstructural and magnetic study of Fe-implanted 6H-SiC. 25th International Conference on Defects in Semiconductors, Jul 2009, St Petersbourg, Russia. pp.4731-4734, ⟨10.1016/j.physb.2009.08.125⟩. ⟨in2p3-00684897⟩



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