Xe-implanted zirconium oxycarbide studied by variable energy positron beam

N. Djourelov , G. Gutierrez (1) , H. Marinov , E. Popov , N. Toulhoat (1, 2) , N. Moncoffre (1) , Y. Pipon (1, 3) , P. Nédélec (1)

1 IPNL - Institut de Physique Nucléaire de Lyon
2 CEA-DES (ex-DEN) - CEA-Direction des Energies (ex-Direction de l'Energie Nucléaire)
3 UCBL - Université Claude Bernard Lyon 1

The effect of annealing on defects and the formation of Xe bubbles were investigated in zirconium oxycarbide implanted with 800-keV136Xe2+ ions at two fluences 1 × 1015 and 1 × 1016 Xe/cm2. Doppler broadening technique combined with slow positron beam was used. The analysis of the S depth profiles and S-W maps revealed that in the as-implanted samples at both fluences Xe bubbles are not formed. The post-implantation annealing of the samples implanted at 1 × 1016 Xe/cm2 caused formation of Xe bubbles. The response of the lower implantation dose samples to this post implantation annealing was found rather complicated and is discussed.

Domaines: Chimie-Physique [physics.chem-ph]

N. Djourelov, G. Gutierrez, H. Marinov, E. Popov, N. Toulhoat, et al.. Xe-implanted zirconium oxycarbide studied by variable energy positron beam. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2011, 269, pp.2709-2714. ⟨10.1016/j.nimb.2011.08.022⟩. ⟨in2p3-00661732⟩