Grain growth and structural transformation in ZnS nanocrystalline thin films

S.P. Patel , J.C. Pivin (1) , V.V.S. Kumar , A. Tripathi , D. Kanjilal , L. Kumar

1 CSNSM PCI

Fabrication of ZnS thin films having similar stoichiometry at different substrate temperatures (T(s)) e.g. 200 degrees C, 300 degrees C and 400 degrees C by means of RF magnetron sputtering method is presented. The films grown at Ts of 200 degrees C are in cubic zinc-blende phase and textured along (111) plane. The films deposited at T(s) of 300 degrees C and 400 degrees C are in hexagonal wurtzite phase. The surface roughness and grain size of the films increase with increasing T(s), The ultra-violet and visible absorption studies show that the bandgap of films can be tailored by varying T(s), taking advantage of the structural transformation. (C) 2010 Elsevier Ltd. All rights reserved.

Mots clés: Thin films; Surface roughness; Structural transformation; X-ray diffraction; Atomic force microscopy; Bandgap

Domaines: Science des matériaux [cond-mat.mtrl-sci]

S.P. Patel, J.C. Pivin, V.V.S. Kumar, A. Tripathi, D. Kanjilal, et al.. Grain growth and structural transformation in ZnS nanocrystalline thin films. Vacuum, 2010, 85, pp.307-311. ⟨10.1016/j.vacuum.2010.06.011⟩. ⟨in2p3-00610608⟩