Tests of a backside illuminated monolithic CMOS pixel sensor in an HPD set-up

W. Dulinski , A. Braem , M. Caccia , G. Claus , G. Deptuch , D. Grandjean (1) , C. Joram , J. Seguinot , M. Winter (1)

1 IReS - Institut de Recherches Subatomiques

A backside illuminated, monolithic CMOS pixel sensor for direct detection of low energy electrons has been developed and is proposed as an active element for a non-destructive hadron beam monitor. In this application, the device is used as an imager of secondary electrons emitted from an aluminium foil of sub-micrometer thick intersecting the beam and accelerated in an electrostatic field to $\sim 20–30 keV energy. The sensitivity to these electron energies (a few microns range in silicon) is obtained by back-thinning the detector, fabricated in the form of standard VLSI chip, down to the radiation sensitive epitaxial layer. The original thinning procedure was applied for processing of a large area, one million pixels prototype. The prototype has been tested using low-energy electrons inside an HPD structure. Tests results proving the device imaging capabilities of such a radiation are presented.

Mots clés: Monolithic active pixel sensors; CMOS; Backside illuminated; Low energy electrons detection; HPD

Domaines: Instrumentations et Détecteurs [physics.ins-det]; Physique des Hautes Energies - Expérience [hep-ex]

W. Dulinski, A. Braem, M. Caccia, G. Claus, G. Deptuch, et al.. Tests of a backside illuminated monolithic CMOS pixel sensor in an HPD set-up. 6th International Workshop on Radiation Imaging Detectors, Jul 2004, Glasgow, United Kingdom. pp.274-280, ⟨10.1016/j.nima.2005.03.116⟩. ⟨in2p3-00024249⟩