Tritium autoradiography with thinned and back-side illuminated monolithic active pixel sensor device

G. Deptuch (1, 2)

1 IReS - Institut de Recherches Subatomiques
2 Department of Electronics [Krakow]

The first autoradiographic results of the tritium ($^3H$) marked source obtained with monolithic active pixel sensors are presented. The detector is a high-resolution, back-side illuminated imager, developed within the SUCIMA collaboration for low-energy (<30 keV) electrons detection. The sensitivity to these energies is obtained by thinning the detector, originally fabricated in the form of a standard VLSI chip, down to the thickness of the epitaxial layer. The detector used is the $1\times{10^6}$ pixel, thinned MIMOSA V chip. The low noise performance and thin ($\approx$160 nm) entrance window provide the sensitivity of the device to energies as low as $\approx~$4 keV. A polymer tritium source was parked directly atop the detector in open-air conditions. A real-time image of the source was obtained.

Mots clés: Monolithic active pixel sensors; CMOS; Pixel detectors; Autoradiography; Tritium

Domaines: Instrumentations et Détecteurs [physics.ins-det]

G. Deptuch. Tritium autoradiography with thinned and back-side illuminated monolithic active pixel sensor device. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2005, 543, pp.537-548. ⟨10.1016/j.nima.2004.12.024⟩. ⟨in2p3-00024148⟩