Preparation and characterization of Cu2ZnxFe1−xSnS4 thin ‎films deposited on intrinsic silicon substrates

Marwa Sebai , Ghada Bousselmi , Jean-Louis Lazzari (1) , Mounir Kanzari

1 CINaM - Centre Interdisciplinaire de Nanoscience de Marseille

The present paper reports the study of the effect of zinc content in Cu2Zn1−xFexSnS4 thin films. To achieve this purpose, CZTS, CZ0.5F0.5TS and CZTS thin films were grown at room temperature via thermal evaporation on unheated silicon substrates, which was followed by sulfidation at 400 °C. Analysis by x-ray diffraction indicates the polycrystalline nature of the CZFTS films with a preferential orientation along the (112) plane with structural transition from stannite (x = 0) to kesterite (x = 1) as the zinc content increases. The elemental composition of all thin films was analyzed by the EDAX technique. Morphological patterns were also explored in order to better understand the evolution of grain size and thickness as a function of zinc content. Hall effect measurements showed that the highest conductivity was obtained for CZTS. Impedance spectroscopy (IS) was performed between 5 Hz and 13 MHz. The complex impedance plots of the different samples revealed a single semicircle, suggesting that the response comes from a single capacitive element consistent with the grains. This measurement (IS) confirmed the enhancement of the conduction mechanism with increasing x-fraction. Experimental data suggested that AC conductivity in thin films C(Z, F)TS is proportional to ωs (s < 1). This is consistent with the correlated barrier hopping (CBH) model.

Domaines: Sciences de l'ingénieur [physics]

Marwa Sebai, Ghada Bousselmi, Jean-Louis Lazzari, Mounir Kanzari. Preparation and characterization of Cu2ZnxFe1−xSnS4 thin ‎films deposited on intrinsic silicon substrates. Materials Today Communications, 2023, 35, pp.105558. ⟨10.1016/j.mtcomm.2023.105558⟩. ⟨hal-04311472⟩