Tight Binding and Density Functional Theory of Tailoring Electronic Properties in Al1−xInxN/AlN/GaN High Electron Mobility Transistors (HEMTs)

Meziani Abdelhakim (1) , Abdul-Rahman Allouche (2) , Telia Azzedine (1) , Hilmi Unlu (3)

1 UMC - Université Frères Mentouri – Constantine 1 = Constantine 1 – Frères Mentouri University
2 iLM - THEOCHEM - iLM - Physico-chimie théorique
3 ITÜ - Istanbul Technical University

Domaines: Physique [physics]

Meziani Abdelhakim, Abdul-Rahman Allouche, Telia Azzedine, Hilmi Unlu. Tight Binding and Density Functional Theory of Tailoring Electronic Properties in Al1−xInxN/AlN/GaN High Electron Mobility Transistors (HEMTs). Progress in Nanoscale and Low-Dimensional Materials and Devices, 144, Springer International Publishing, pp.669-707, 2022, Topics in Applied Physics, 978-3-030-93459-0. ⟨10.1007/978-3-030-93460-6_24⟩. ⟨hal-04267855⟩