Influence of the Cl$_2$ etching on the Al$_2$O$_3$ /GaN metal–oxide–semiconductor interface
Résumé
Controlling the plasma etching step involved in metal-oxide-semiconductor high-electron-mobility-transistor (MOSHEMT) GaN fabrication is essential for device performance and reliability. In particular, understanding the impact of GaN etching conditions on dielectric/GaN interface chemical properties is critically important. In this work, we investigate the impact of the carrier wafers (Si, photoresist, SiO 2 , and Si 3 N 4 ) used during the etching of GaN in chlorine plasma on the electrical behavior of Al 2 O 3 /n-GaN metal–oxide–semiconductor (MOS) capacitors. X-ray Photoelectron spectroscopy (XPS) analyses show that the Al 2 O 3 /GaN interface layer contains contaminants from the etching process after the Al 2 O 3 deposition. Their chemical nature depends on the plasma chemistry used as well as the chemical nature of the carrier wafer. Typically, Cl and C are trapped at the interface for all substrates. In the particular case of Si carrier wafer, a significant amount of SiO x is present at the Al 2 O 3 /GaN interface. The capacitance–voltage (C–V) characteristics of the MOS capacitors indicate that the presence of Si residues at the interface shifts the flat band voltage to negative values, while the presence of Cl or C at the interface increases the hysteresis. We demonstrate that introducing an in situ plasma cleaning treatment based on N 2 /H 2 gas, before the atomic layer deposition, allows the removal of most of the residues except silicon and suppresses the hysteresis.
Domaines
Sciences de l'ingénieur [physics]
Origine : Fichiers produits par l'(les) auteur(s)