Rashba–Edelstein Effect in the h‐BN Van Der Waals Interface for Magnetization Switching

Qidong Xie (1) , Weinan Lin (1) , Jinghua Liang (2) , Hengan Zhou (3) , Moaz Waqar (1) , Ming Lin (4) , Siew Lang Teo (4) , Hao Chen (1) , Xiufang Lu (1) , Xinyu Shu (1) , Liang Liu (1) , Shaohai Chen (1) , Chenghang Zhou (1) , Jianwei Chai (4) , Ping Yang (1) , Kian Ping Loh (1) , John Wang (1) , Wanjun Jiang (3) , Aurelien Manchon (5) , Hongxin Yang (2) , Jingsheng Chen (1)

1 NUS - National University of Singapore
2 Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences
3 THU - Tsinghua University [Beijing]
4 IMRE - Institute of Materials Research and Engineering
5 CINaM - Centre Interdisciplinaire de Nanoscience de Marseille

Mots clés: van der Waals material; spin-orbit torque; light element; orbital hybridization

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Qidong Xie, Weinan Lin, Jinghua Liang, Hengan Zhou, Moaz Waqar, et al.. Rashba–Edelstein Effect in the h‐BN Van Der Waals Interface for Magnetization Switching. Advanced Materials, 2022, 34 (33), pp.2109449. ⟨10.1002/adma.202109449⟩. ⟨hal-03836477⟩