[Invited] From research to production: how MBE can unlock GaN-on-Si technology

Fabrice Semond (1, 2) , Stephanie Rennesson (2) , Sébastian Tamariz (1, 2) , Elodie Carneiro (3, 2) , Jash Mehta (3) , F Medjdoub (3)

1 CRHEA - Centre de recherche sur l'hétéroepitaxie et ses applications
2 EasyGaN
3 WIND - IEMN - WIde baNd gap materials and Devices - IEMN

MBE has several advantages for the epitaxy of GaN-based heterostructures. More specifically, by controlling the interface between the AlN buffer layer and the silicon substrate, ammonia-MBE allows to grow innovative structures on silicon. Epitaxy on silicon necessarily requires a demonstration of scaling-up on large wafers used by the microelectronics industry. Properties of several epitaxial heterostructures grown on 200 mm substrate are presented and discussed, emphasizing the originality of these structures and the beneficial contribution of MBE. Also, prospects and future challenges are discussed.

Domaines: Sciences de l'ingénieur [physics]

Fabrice Semond, Stephanie Rennesson, Sébastian Tamariz, Elodie Carneiro, Jash Mehta, et al.. [Invited] From research to production: how MBE can unlock GaN-on-Si technology. The International Conference on Molecular Beam Epitaxy (ICMBE 2022), Sep 2022, Sheffield, United Kingdom. ⟨hal-03828770⟩