Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes

P. Vigneshwara Raja (1, 2) , Christophe Raynaud (1, 3) , Camille Sonneville (1, 3) , Atse Julien Eric N’dohi (1, 3) , Hervé Morel (1, 3) , Luong Viet Phung (1, 3) , Thi Huong Ngo (4) , Philippe de Mierry (4) , Eric Frayssinet (4) , Hassan Maher (5) , Josiane Tasselli (6) , Karine Isoird (6) , Frédéric Morancho (6) , Yvon Cordier (4) , Dominique Planson (1, 3)

1 EE - Ampère, Département Energie Electrique
2 IITD - IIT Dharwad
3 INSA Lyon - Institut National des Sciences Appliquées de Lyon
4 CRHEA - Centre de recherche sur l'hétéroepitaxie et ses applications
5 LN2 - Laboratoire Nanotechnologies et Nanosystèmes [Sherbrooke]
6 LAAS-ISGE - Équipe Intégration de Systèmes de Gestion de l'Énergie

This paper reports comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes (SBDs) fabricated on free-standing GaN substrates. The GaN active layer properties are evaluated by atomic force microscopy (AFM), secondary-ion mass spectrometry (SIMS), micro-Raman spectroscopy, cathodoluminescence (CL), and deep-level transient Fourier spectroscopy (DLTFS). The GaN SBDs exhibit near-unity ideality factor (n = 1.1), promising Schottky barrier height (SBH) of ΦB = 0.82 eV, low turn-on voltage ~0.56 V, leakage current density of JR < 5.5×10-6 Acm-2 at-100 V, breakdown voltage VBR <-200 V, and less interface state density (NSS < 5×10 12 eV-1 cm-2) at the Ni/GaN Schottky contact. The forward and reverse current transport mechanisms of the SBD are identified by fitting analysis of measured J-V. Weak temperature dependence of ΦB and n is detected from I-V-T measurements. Similar traps at EC-0.18 eV and EC-0.56 are identified in the various SBDs from DLTFS, signifying that these traps are omnipresent defects in the epilayer.

Mots clés: Free-standing GaN; Schottky barrier diode; current transport; material characterization; defects; DLTFS

Domaines: Energie électrique

P. Vigneshwara Raja, Christophe Raynaud, Camille Sonneville, Atse Julien Eric N’dohi, Hervé Morel, et al.. Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes. Microelectronics Journal, 2022, 128, pp.105575. ⟨10.1016/j.mejo.2022.105575⟩. ⟨hal-03826217⟩