Inter-diffusion of cobalt and silicon through an ultra thin aluminum oxide layer

T. El Asri (1) , M. Raissi (2) , Sébastien Vizzini (3) , A. El Maachi (1) , E. L. Ameziane (1) , F. Arnaud d'Avitaya (2) , J.-L. Lazzari (2) , C. Coudreau (2) , Hamid Oughaddou (4) , Bernard Aufray (2) , A. Kaddouri (1)

1 Faculté des Sciences Semlalia [Marrakech]
2 CINaM - Centre Interdisciplinaire de Nanoscience de Marseille
3 CEA - Commissariat à l'énergie atomique et aux énergies alternatives
4 IRAMIS - Institut Rayonnement Matière de Saclay (DRF)

Optical emission spectroscopy of sputtered species during ion bombardment, Auger electron spectroscopy and high-resolution transmission electron microscopy were used to study the cobalt and silicon diffusion through the interfaces of Co/AlO/Si(0 0 1) hetero-structure. The results are discussed as a function of the annealing temperature of sample and show that the diffusion process at the interfaces starts for annealing temperatures above 200 °C without detectable modification of the oxide layer.

Domaines: Astrophysique [astro-ph]

T. El Asri, M. Raissi, Sébastien Vizzini, A. El Maachi, E. L. Ameziane, et al.. Inter-diffusion of cobalt and silicon through an ultra thin aluminum oxide layer. Applied Surface Science, 2010, 256, pp.2731-2734. ⟨10.1016/j.apsusc.2009.11.018⟩. ⟨hal-03786432⟩