Optimisation of the parameters of an extended defect model applied to non-amorphizing implants

E. Lampin (1) , Fuccio Cristiano (2) , Youness Lamrani (2) , Damien Connétable (2)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 LAAS - Laboratoire d'analyse et d'architecture des systèmes

In this paper, we present the optimisation of the parameters of a physical model of the kinetics of extended defects and applied the model with the optimised parameters to non-amorphizing implants. The model describes the small clusters, the {113} defects and the dislocation loops. In the first part, we determine the formation energies of the small clusters, the fault energy of the {113} defects, their Burgers vector and the self-diffusivity of silicon using TEM measurements and extractions of the supersaturation from the spreading of boron marker layers in low-dose implanted silicon. The improvements of the simulations are presented for the fitted experiments and for other wafers annealed at intermediate temperatures. In the second part, we increase the dose and energy of the non-amorphizing implant, leading to the transformation of {113} defects into dislocation loops. The predictions obtained with the optimised model are shown to be in agreement with the measurements.

Mots clés: Transient enhanced diffusion; Dopant diffusion; Silicon; Evolution; SI; Dissolution; Point

Domaines: Génie mécanique [physics.class-ph]

E. Lampin, Fuccio Cristiano, Youness Lamrani, Damien Connétable. Optimisation of the parameters of an extended defect model applied to non-amorphizing implants. Materials Science and Engineering: B, 2005, 124-125, pp.397-400. ⟨10.1016/j.mseb.2005.08.032⟩. ⟨hal-03599806⟩