4H-SiC PiN diode protected by narrow field rings investigated by the micro-OBIC method

Dominique Planson (1, 2) , Camille Sonneville (1, 2) , Pascal Bevilacqua (1, 2) , Luong Viêt V Phung (1, 2) , Besar Asllani (1) , Dominique Tournier (3, 2) , Pierre Brosselard (3, 2)

1 EE - Ampère, Département Energie Electrique
2 INSA Lyon - Institut National des Sciences Appliquées de Lyon
3 CALY Technologies

This paper presents micro-OBIC measurements performed at different voltages on two devices protected by narrow field rings. At the surface of the device #1, a polyimide layer was deposited during the fabrication process. On the contrary, passivation layer was removed on device #2. Thanks to the micro-OBIC micrometer spatial resolution and the spot size was carefully focused, small gaps in the range of 1 μm can be visible on OBIC profiles. Thus, the variation of the μ-obic accurately reflects the topology of each ring.

Mots clés: periphery protection; electro-physical characterisation; high voltage device; 4H-SiC bipolar diode; OBIC

Domaines: Energie électrique

Dominique Planson, Camille Sonneville, Pascal Bevilacqua, Luong Viêt V Phung, Besar Asllani, et al.. 4H-SiC PiN diode protected by narrow field rings investigated by the micro-OBIC method. Materials Science Forum, 2022, 1062, pp.341-345. ⟨10.4028/p-2ch22f⟩. ⟨hal-03689424⟩