HOT-CARRIER RELIABILITY IN n-MOSFETs USED AS PASS-TRANSISTORS

D Goguenheim (1, 2) , Alain Bravaix (1, 2) , Dominique Vuillaume (3) , M Varrot (4) , N Revil (4) , P Mortini (4)

1 Yncréa Méditerrané
2 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence
3 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
4 ST-CROLLES - STMicroelectronics [Crolles]

AC stressing is investigated to determine the hot-carrier reliability in a 0.5 μm CMOS technology and is interpreted by a quasi-static model based on distinct damage mechanisms. The hot-carrier dependence of n-MOSFETs operating in pass-transistor configurations is carefully studied as a function of the propagation time and geometry. It is shown that device degradation may exhibit in some cases a strong dependence on the propagation time and clearly differs from the simple case of inverter operation.

Mots clés: CMOS; AC stress; Pass transistor; Hot-carriers; interface traps; oxide traps; propagation time

Domaines: Sciences de l'ingénieur [physics]

D Goguenheim, Alain Bravaix, Dominique Vuillaume, M Varrot, N Revil, et al.. HOT-CARRIER RELIABILITY IN n-MOSFETs USED AS PASS-TRANSISTORS. Microelectronics Reliability, 1998, Microelectronics Reliability, 38 (4), pp.539-544. ⟨10.1016/S0026-2714(97)00217-5⟩. ⟨hal-03674496⟩