A combined physicochemical-microstructural approach to predict the crack path at the topside interconnections in IGBT power devices

Mustafa Shqair (1, 2) , Zoubir Khatir (2, 1) , Ali Ibrahim (1, 2) , Mounira Bouarroudj-Berkani (1) , Ayda Halouani (1) , T. Hamieh (3)

1 SATIE - Systèmes et Applications des Technologies de l'Information et de l'Energie
2 Université Gustave Eiffel
3 Maastricht University [Maastricht]

Domaines: Sciences de l'ingénieur [physics]

Mustafa Shqair, Zoubir Khatir, Ali Ibrahim, Mounira Bouarroudj-Berkani, Ayda Halouani, et al.. A combined physicochemical-microstructural approach to predict the crack path at the topside interconnections in IGBT power devices. Microelectronics Reliability, 2022, 132, pp.114516. ⟨10.1016/j.microrel.2022.114516⟩. ⟨hal-03656143⟩