CVD diamond Schottky barrier diode, carrying out and characterization

S. Koné (1) , G. Civrac (1) , H. Schneider (1) , Karine Isoird (1) , R. Issaoui (2) , J. Achard (2) , A. Gicquel (2)

1 LAAS-ISGE - Équipe Intégration de Systèmes de Gestion de l'Énergie
2 LIMHP - Laboratoire d'Ingénierie des Matériaux et des Hautes Pressions

A p-type diamond Schottky barrier diode (SBD) on homoepitaxial CVD diamond is presented. The technologic steps required to carry out the experimental device are described in this paper. The B-acceptors concentration and the barrier height have been extracted from C–V measurements leading to Ns ∼ 1.2 × 1017 cm− 3 and ΦΒ = 1.8 eV respectively. The current–voltage experimental measurements performed at room temperature have shown high current density in the range of 900 A/cm2. However, the breakdown voltage of the device was limited to 25 V, this low reverse value suggest the presence of a large defect density in the bulk.

Domaines: Sciences de l'ingénieur [physics]

S. Koné, G. Civrac, H. Schneider, Karine Isoird, R. Issaoui, et al.. CVD diamond Schottky barrier diode, carrying out and characterization. Diamond and Related Materials, 2010, 19 (7-9), pp.792-795. ⟨10.1016/j.diamond.2010.01.036⟩. ⟨hal-03575952⟩