Cathodoluminescence mapping of electron concentration in MBE-grown GaAs:Te nanowires

Capucine Tong (1, 2) , Thomas Bidaud (2) , Eero Koivusalo (3) , Marcelo Rizzo Piton (3) , Mircea Guina (3) , Helder Galeti (4) , Y Galvao Gobato (4) , Andrea Cattoni (2, 1) , Teemu Hakkarainen (3) , Stéphane Collin (2, 1)

1 IPVF - Institut Photovoltaïque d’Ile-de-France (UMR)
2 C2N - Centre de Nanosciences et de Nanotechnologies
3 University of Tampere [Finland]
4 Federal University of So Carlos

Abstract Cathodoluminescence mapping is used as a contactless method to probe the electron concentration gradient of Te-doped GaAs nanowires. The room temperature and low temperature (10 K) cathodoluminescence analysis method previously developed for GaAs:Si is first validated on five GaAs:Te thin film samples, before extending it to the two GaAs:Te NW samples. We evidence an electron concentration gradient ranging from below 1 x 10 18 cm -3 to 3.3 x 10 18 cm -3 along the axis of a GaAs:Te nanowire grown at 640 °C, and a homogeneous electron concentration of around 6 - 8 x 10 17 cm -3 along the axis of a GaAs:Te nanowire grown at 620 °C. The differences in the electron concentration levels and gradients between the two nanowires is attributed to different Te incorporation efficiencies by vapor-solid and vapor-liquid-solid processes.

Domaines: Optique / photonique; Micro et nanotechnologies/Microélectronique; Matière Condensée [cond-mat]; Matériaux

Capucine Tong, Thomas Bidaud, Eero Koivusalo, Marcelo Rizzo Piton, Mircea Guina, et al.. Cathodoluminescence mapping of electron concentration in MBE-grown GaAs:Te nanowires. Nanotechnology, 2022, ⟨10.1088/1361-6528/ac4d58⟩. ⟨hal-03539939⟩