Nanostructuring graphene on SiC by focused ion beam: Effect of the ion fluence

B. Prevel (1) , J.-M. Benoit (1) , L. Bardotti (1) , P. Mélinon (1) , A. Ouerghi (2) , D. Lucot (2) , E. Bourhis (2) , J. Gierak (2)

1 LPMCN - Laboratoire de Physique de la Matière Condensée et Nanostructures
2 LPN - Laboratoire de photonique et de nanostructures

Epitaxial graphene on silicon carbide labeled 6H-SiC (0001) substrate has been patterned using high resolution focused ion beam. Atomic force microscopy and Raman spectroscopy measurements give evidence of the strong resilience of the graphene monolayer to ion irradiation. The morphology and electronic properties of defects versus ion doses exhibit a progressive local amorphization of graphene.

Mots clés: Carbon based materials; Materials treatment; Ion beam analysis; Chemical processes; Focused ion beam; Atomic force microscopy; Carbides; Raman spectroscopy; Graphene; Chemical elements

Domaines: Sciences de l'ingénieur [physics]; Chimie; Physique [physics]

B. Prevel, J.-M. Benoit, L. Bardotti, P. Mélinon, A. Ouerghi, et al.. Nanostructuring graphene on SiC by focused ion beam: Effect of the ion fluence. Applied Physics Letters, 2011, 99 (8), pp.083116. ⟨10.1063/1.3628341⟩. ⟨hal-03513897⟩