Van der Waals epitaxy of nitride optoelectronic devices based on two-dimensional hBN

Abdallah Ougazzaden (1, 1) , Suresh Sundaram (1, 1) , Phuong Vuong (1, 1) , Adama Mballo (1, 1) , Gilles Patriarche , Ashutosh Srivastava (1, 1) , Ali Ahaitouf (1, 1) , Simon Gautier , Tarik Moudakir , Paul Voss (1, 1) , Jean-Paul Salvestrini (1, 1)

1 Georgia Tech Lorraine [Metz]

Combined photonic and electronic systems require diverse devices to be co-integrated on a common platform. This heterogeneous integration is made possible through several separation and transfer methods where the functioning epilayers are essentially released from their growth substrate. The use of 2D layered h-BN as a mechanical release layer has been demonstrated to be a promising technique for the hybrid integration of III-nitride devices. In this talk we will give an overview of our results on wafer-scale van der Waals epitaxy by MOVPE of different III-N heterostructure devices such as LEDs, HEMTs, solar cells, sensors and photodetectors. Furthermore, mechanical release and transfer techniques of crack-free III-N devices on foreign substrates will be presented along with a comparison between the device performances before and after transfer.

Mots clés: Epitaxy; Optoelectronic devices; Field effect transistors; Heterojunctions; Light emitting diodes; Photodetectors; Sensors

Domaines: Sciences de l'ingénieur [physics]

Abdallah Ougazzaden, Suresh Sundaram, Phuong Vuong, Adama Mballo, Gilles Patriarche, et al.. Van der Waals epitaxy of nitride optoelectronic devices based on two-dimensional hBN. Gallium Nitride Materials and Devices XVI, Mar 2021, Online Only, 11686, SPIE, pp.39, 2021, ⟨10.1117/12.2584985⟩. ⟨hal-03350528⟩