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Fatigue test on flexible graphene field effect transistors with bottom gate electrode

Abstract : Graphene is a promising candidate as channel material for flexible wearable radio frequency devices. In this work we fabricated double gate flexible graphene field effect transistors and characterized their DC and RF performance. Moreover, we performed a fatigue test consisting on a 1000 times dynamical bending at 1 Hz. The banding radius was 40 mm, which correspond to a strain of 0.16%. The DC and RF characterization shows the device performance variation is around 10%. The finding demonstrates the robustness of our GFETs, further work will be needed to determine the physical mechanism that cause the performance change.
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Submitted on : Monday, September 6, 2021 - 3:19:29 PM
Last modification on : Tuesday, November 30, 2021 - 9:02:13 AM

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W. Wei, D. Fadil, S. Mhedhbi, S. Bensalk, E. Pallecchi, et al.. Fatigue test on flexible graphene field effect transistors with bottom gate electrode. IEEE MTT-S International Microwave Symposium, IMS 2018, Jun 2018, Philadelphia, PA, United States. pp.348-351, ⟨10.1109/MWSYM.2018.8439185⟩. ⟨hal-03335831⟩

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