Characterization of 4H-SiC junction barrier Schottky diodes by admittance vs. temperature analyses

Christophe Raynaud (1, 2) , D M Nguyen (1, 2) , Pierre Brosselard (1, 2) , A Pérez-Tomás (3) , Dominique Planson (1, 2) , J Millán (3)

1 EE - Ampère, Département Energie Electrique
2 INSA Lyon - Institut National des Sciences Appliquées de Lyon
3 CNM - Centro Nacional de Microelectronica [Spain]

Domaines: Sciences de l'ingénieur [physics]; Energie électrique

Christophe Raynaud, D M Nguyen, Pierre Brosselard, A Pérez-Tomás, Dominique Planson, et al.. Characterization of 4H-SiC junction barrier Schottky diodes by admittance vs. temperature analyses. European Conference on Silicon Carbide and Related Materials ECSCRM 2008, Sep 2008, Barcelone, Spain. ⟨hal-03331775⟩