Attractive electron mobility in (113) n-type phosphorus-doped homoepitaxial diamond

Marie-Amandine Pinault-Thaury (1) , Ingrid Stenger (1) , Rémi Gillet (1) , Solange Temgoua (1) , Ekaterina Chikoidze (1) , Yves Dumont (1) , François Jomard (1) , Thierry Kociniewski (1) , Julien Barjon (1)

1 GEMAC - Groupe d'Etude de la Matière Condensée

A (113) diamond homoepilayer doped with phosphorus is grown. It presents high crystalline quality and n-type conductivity with a maximum electron mobility of 355 cm 2 /V.s at 450K. Its electrical properties are compared to those measured on conventionally oriented (100) and (111) homoepilayers synthetized in the same reactor with similar phosphorus content (~1e2x10 18 at/cm 3). The (113) layer presents higher electron mobility than the (100) film, despite a comparable compensation ratio. Besides, above 450 K the (113) electron mobility is also higher than the one of the low compensated (111) sample. This shows the attractive character of the (113) diamond orientation for n-type doping.

Domaines: Matière Condensée [cond-mat]; Physique [physics]

Marie-Amandine Pinault-Thaury, Ingrid Stenger, Rémi Gillet, Solange Temgoua, Ekaterina Chikoidze, et al.. Attractive electron mobility in (113) n-type phosphorus-doped homoepitaxial diamond. Carbon, 2021, 175, pp.254-258. ⟨10.1016/j.carbon.2021.01.011⟩. ⟨hal-03322608⟩