Ni-Al Ohmic contact to p-type 4H-SiC

Heu Vang (1, 2) , Mihai Lazar (1, 2) , Pierre Brosselard (1, 2) , Christophe Raynaud (1, 2) , Pierre Cremilleu (3) , Jean-Louis Leclercq (4) , J.-M Bluet (5) , Sigo Scharnholz (6) , Dominique Planson (1, 2)

1 CEGELY - Centre de génie électrique de Lyon
2 INSA Lyon - Institut National des Sciences Appliquées de Lyon
3 INL - Nanolyon - INL - Plateforme Technologique Nanolyon
4 INL - Photonique - INL - Nanophotonique
5 INL - Institut des Nanotechnologies de Lyon
6 ISL - Institut franco-allemand de recherches de Saint-Louis

Investigations on Ni-Al alloys to form ohmic contacts on p-type 4H-SiC are presented in this paper. Several ratios of the Ni/Al contact were examined. Rapid thermal annealing was performed in Argon atmosphere at 400°C during 1 minute, followed by an annealing at 1000°C during 2 minutes. In order to extract the specific contact resistance, transmission line method (TLM) test-structures were fabricated. A specific contact resistance of 3×10-5 Ω.cm2 was obtained reproducibly on p-type layers, with a doping of NA = 1×1019 cm-3 performed by Al2+ ion implantation. The lowest specific contact resistance value measured was 8×10-6 Ω.cm2.

Mots clés: silicon carbide; Ohmic contact resistance; P-type 4H-SiC

Domaines: Energie électrique

Heu Vang, Mihai Lazar, Pierre Brosselard, Christophe Raynaud, Pierre Cremilleu, et al.. Ni-Al Ohmic contact to p-type 4H-SiC. 2006 Spring Meeting of the European Materials Research Society (E-MRS 2006), May 2006, Nice, France. ⟨10.1016/j.spmi.2006.08.004⟩. ⟨hal-03316263⟩