First demonstration of RF GaN-based transistors using buffer-free heterostructures with low trapping effects

R Pecheux (1) , Riad Kabouche (1, 2) , Malek Zegaoui (1) , J T Chen (3) , O Kordina (3) , F Medjdoub (1, 2)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 WIND - IEMN - WIde baNd gap materials and Devices - IEMN
3 swegan

Domaines: Sciences de l'ingénieur [physics]

R Pecheux, Riad Kabouche, Malek Zegaoui, J T Chen, O Kordina, et al.. First demonstration of RF GaN-based transistors using buffer-free heterostructures with low trapping effects. International Workshop on Nitride Semiconductors, IWN 2018, Nov 2018, Kanazawa, Japan. ⟨hal-03288139⟩