Power performance at 40 GHz of AlGaN/GaN high electron mobility transistors grown by molecular beam epitaxy on Si(111) substrate

Philippe Altuntas (1) , François Lecourt (1) , Adrien Cutivet (1) , N. Defrance (1, 2) , Etienne Okada (1) , Marie Lesecq (1, 2) , Stephanie Rennesson (3) , Alain Agboton (1) , Yvon Cordier (3) , Virginie Hoel (1, 4) , Jean-Claude de Jaeger (1, 2)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 PUISSANCE - IEMN - Puissance - IEMN
3 CRHEA - Centre de recherche sur l'hétéroepitaxie et ses applications
4 CSAM - IEMN - Circuits Systèmes Applications des Micro-ondes - IEMN

This letter reports on the demonstration of microwave power performance at 40 GHz on AlGaN/GaN high-electron mobility transistor grown on silicon (111) substrate by molecular beam epitaxy. A maximum dc current density of 1.1 A.mm(-1) and a peak extrinsic transconductance of 374 mS.mm(-1) are obtained for 75-nm gate length device. At V-DS = 25 V, continuous-wave output power density of 2.7 W.mm(-1) is achieved at 40 GHz associated with 12.5% power-added efficiency and a linear power gain (G(p)) of 6.5 dB. The device exhibits an intrinsic current gain cutoff frequency F-T of 116 GHz and a maximum oscillation frequency F-MAX of 150 GHz. This performance demonstrates the capability of low cost microwave power devices up to Ka-band.

Mots clés: AlGaN/GaN; high electron mobility transistor (HEMT); Ka-band; millimeter-wave power density

Domaines: Sciences de l'ingénieur [physics]

Philippe Altuntas, François Lecourt, Adrien Cutivet, N. Defrance, Etienne Okada, et al.. Power performance at 40 GHz of AlGaN/GaN high electron mobility transistors grown by molecular beam epitaxy on Si(111) substrate. IEEE Electron Device Letters, 2015, 36 (4), pp.303-305. ⟨10.1109/LED.2015.2404358⟩. ⟨hal-03276913⟩