Optimization of pentacene double floating gate memories based on charge injection regulated by SAM functionalization

S. Li (1) , David Guérin (1) , Stéphane Lenfant (2) , K. Lmimouni (2)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 NCM - IEMN - Nanostructures, nanoComponents & Molecules - IEMN

Pentacene based double nano-floating gate memories (NFGM) by using gold nanoparticles (Au NPs) and reduced graphene oxide (rGO) sheets as charge trapping layers are prepared and demonstrated. Particularly, the NFGM chemically treated by 2,3,4,5,6-pentafluorobenzenethiol (PFBT) self-assembled monolayers (SAM) exhibits excellent memory performances, including high mobility of 0.23 cm2V-1s-1, the large memory window of 51 V, and the stable retention property more than 108 s. Comparing the performances of NFGM without treating with PFBT SAM, the improving performances of the memory devices by SAM modification are explained by the increase of charge injection, which could be further investigated by XPS and UPS. In particular, the results highlight the utility of SAM modulations and controlling of charge transport in the development of organic transistor memories.

Domaines: Electronique

S. Li, David Guérin, Stéphane Lenfant, K. Lmimouni. Optimization of pentacene double floating gate memories based on charge injection regulated by SAM functionalization. AIP Advances, 2018, 8 (2), pp.025110. ⟨10.1063/1.5010403⟩. ⟨hal-03185609⟩