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Imprint issue during retention tests for HfO2 -based FRAM: An industrial challenge?

Abstract : Note: This paper is part of the Special Topic on Materials and Devices Utilizing Ferroelectricity in Halfnium Oxide.
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https://hal.archives-ouvertes.fr/hal-03177059
Contributor : Bertrand Vilquin Connect in order to contact the contributor
Submitted on : Monday, March 22, 2021 - 8:18:16 PM
Last modification on : Saturday, September 24, 2022 - 2:58:04 PM
Long-term archiving on: : Wednesday, June 23, 2021 - 7:27:23 PM

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Jordan Bouaziz, P. Rojo Romeo, N. Baboux, Bertrand Vilquin. Imprint issue during retention tests for HfO2 -based FRAM: An industrial challenge?. Applied Physics Letters, American Institute of Physics, 2021, 118 (8), pp.082901. ⟨10.1063/5.0035687⟩. ⟨hal-03177059⟩

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