Resonant tunneling transport in AlxGa1-x/InyGa1-yN/ AlxGa1-x/ InzGa1-zN quantum structures

A Bhouri (1) , A Rached (1) , J.-L. Lazzari (2)

1 UM - Université de Monastir - University of Monastir
2 CINaM - Centre Interdisciplinaire de Nanoscience de Marseille

We present a room temperature simulation of the vertical electron transport in the pseudomorphic quantum stack Al0.5G0.5N/InxGa1−xN/Al0.5G0.5N/In0.1Ga0.9N/GaN, which is designed with a 6 nm thick lateral In0.1Ga0.9N/GaN n-type corrected spacer. Using the transfer matrix formalism, we investigate the effects of the conduction band discontinuities and internal field on the transmission coefficient and the current-voltage characteristics by varying the indium contents in the central quantum well. We demonstrate that an optimal design in terms of compositions, thicknesses, and doping of the studied resonant tunneling structure may allow a peak-to-valley ratio as high as 882 @1.1–1.3 V.

Mots clés: Nitride materials; Piezoelectricity; Quantum Wells; Resonant Tunneling Diodes; Peak to Valley Ratio

Domaines: Matière Condensée [cond-mat]; Electronique

A Bhouri, A Rached, J.-L. Lazzari. Resonant tunneling transport in AlxGa1-x/InyGa1-yN/ AlxGa1-x/ InzGa1-zN quantum structures. Journal of Physics D: Applied Physics, 2015, 48 (38), pp.385102. ⟨10.1088/0022-3727/48/38/385102⟩. ⟨hal-03150395⟩