Physical properties of electrodeposited CIGS films on crystalline silicon: Application for photovoltaic hetero-junction

H. Saïdi (1) , C. Ben Alaya (1) , M. F. Boujmil (1) , B. Durand (2) , J.-L. Lazzari (3) , M. Bouaïcha (1)

1 CRTEn - Centre de Recherches et des Technologies de l’Energie
2 CIRIMAT - Centre interuniversitaire de recherche et d'ingenierie des matériaux
3 CINaM - Centre Interdisciplinaire de Nanoscience de Marseille

P-type CIGS (CuIn 1-x Ga x Se 2) thin films are electro-deposited on a p-type c-Si substrate with a galvanostatic mode to form CIGS(p)/c-Si(p) hetero-junction. The Ga content is varied up to x = 30%. The physical properties of formed CIGS films are characterized by XRD, SEM, EDS and UV-Visible spectroscopy. With x = 30%, we obtain a single chalcopyrite phase of CIGS with a tetragonal crystal structure, a high crystallinity, an orientation toward the (112) direction and a band gap energy of 1.40 eV. AM1.5 J-V performed on the CuI 0.7 G 0.3 Se 2 /c-Si hetero-junction reveals interesting photovoltaic parameters with an efficiency of 3.75%. In addition, using the energy diagram of the hetero-junction calculated with the Anderson model, we show that it could play a dual role when combined to a c-Si cell in a Ag-Al/c-Si(n +)/c-Si (p)/CIGS(p)/Al new architecture. Therefore, in addition to its interesting photovoltaic parameters, this heterojunction can substitute the BSF.

Domaines: Matériaux

H. Saïdi, C. Ben Alaya, M. F. Boujmil, B. Durand, J.-L. Lazzari, et al.. Physical properties of electrodeposited CIGS films on crystalline silicon: Application for photovoltaic hetero-junction. Current Applied Physics, 2019, 20 (1), pp.29 - 36. ⟨10.1016/j.cap.2019.09.015⟩. ⟨hal-03141578⟩