Josephson Coupling in Junctions Made of Monolayer Graphene Grown on SiC

Benoit Jouault (1) , S. Charpentier , D. Massarotti (2) , A. Michon (3) , M. Paillet (1) , Jean-Roch Huntzinger (1) , Antoine Tiberj (1) , A.-A. Zahab (1) , T. Bauch (4) , P. Lucignano (5) , A. Tagliacozzo (5, 6) , F. Lombardi (4) , F. Tafuri (5, 2)

1 L2C - Laboratoire Charles Coulomb
2 Seconda Università degli Studi di Napoli = Second University of Naples
3 CRHEA - Centre de recherche sur l'hétéroepitaxie et ses applications
4 Chalmers University of Technology [Göteborg]
5 SPIN - SuPerconducting and other INnovative materials and devices institute
6 University of Naples Federico II = Università degli studi di Napoli Federico II

Chemical vapor deposition has proved to be successful in producing graphene samples on silicon carbide (SiC) homogeneous at the centimeter scale in terms of Hall conductance quantization. Here, we report on the realization of co-planar diffusive Al/ monolayer graphene/ Al junctions on the same graphene sheet, with separations between the electrodes down to 200 nm. Robust Josephson coupling has been measured for separations not larger than 300 nm. Transport properties are reproducible on different junctions and indicate that graphene on SiC substrates is a concrete candidate to provide scalability of hybrid Josephson graphene/superconductor devices.

Mots clés: Graphene; Josephson effect; Silicon carbide; Silicon Carbide

Domaines: Matière Condensée [cond-mat]

Benoit Jouault, S. Charpentier, D. Massarotti, A. Michon, M. Paillet, et al.. Josephson Coupling in Junctions Made of Monolayer Graphene Grown on SiC. Journal of Superconductivity and Novel Magnetism, 2016, 29 (5), pp.1145-1150. ⟨10.1007/s10948-016-3487-1⟩. ⟨hal-03037515⟩