GaN-on-silicon high electron mobility transistors with blocking voltage of 3 kV

Malek Zegaoui (1) , Nicolas Herbecq (1) , Astrid Linge (1) , B. Grimbert (1) , F Medjdoub (1) , I. Roch-Jeune (1)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

A three-terminal breakdown voltage over 3 kV is reported on AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on silicon (Si) (111) substrate with a buffer thickness of 5.5 μm. The breakdown voltage of the 1.5 × 50 μm2 devices has been improved by more than 200% by applying a local substrate removal all around the drain of the transistors in order to suppress the parasitic substrate conduction phenomenon. This establishes a new record breakdown voltage for GaN-on-silicon lateral power devices while maintaining a low specific on-resistance of about 10 mΩ · cm2.

Domaines: Sciences de l'ingénieur [physics]

Malek Zegaoui, Nicolas Herbecq, Astrid Linge, B. Grimbert, F Medjdoub, et al.. GaN-on-silicon high electron mobility transistors with blocking voltage of 3 kV. Electronics Letters, 2015, 51 (19), pp.1532-1534. ⟨10.1049/el.2015.1684⟩. ⟨hal-03028365⟩