Revisiting the Site-Competition Doping of 4H-SiC: Cases of N and Al

Gabriel Ferro (1) , Didier Chaussende (2)

1 LMI - Laboratoire des Multimatériaux et Interfaces
2 SIMaP - Science et Ingénierie des Matériaux et Procédés

Because the well-known site-competition and step-controlled epitaxy rules cannot reasonably describe all the incorporation processes of the main impurities (Al and N) into 4H-SiC during epitaxy, the concept of replacement incorporation was proposed and applied to explain the experimental results published so far. In this model, the transient formation of C or Si vacancies at the surface or sub-surface of terraces is proposed to play a key role by destabilizing the impurities sitting on them. In addition to the availability of these vacancies at the surface, desorption was proposed to be a very important limiting process for Al incorporation while only occasionally relevant for N incorporation. The main 4H-SiC epitaxial growth parameters are reviewed and discussed according to the proposed replacement model. Introduction.

Mots clés: Epitaxy; Doping; Nitrogen; Aluminum; Vacancy

Domaines: Matériaux

Gabriel Ferro, Didier Chaussende. Revisiting the Site-Competition Doping of 4H-SiC: Cases of N and Al. 18th International Conference on Silicon Carbide and Related Materials (ICSCRM 2019), Sep 2019, Kyoto, Japan. pp.96-101, ⟨10.4028/www.scientific.net/MSF.1004.96⟩. ⟨hal-02990885⟩