Internal Structuring of Silicon using THz-Repetition-Rate Trains of Ultrashort Pulses
Résumé
We generate and apply trains of infrared femtosecond pulses at the highest achievable repetition-rates. This gives unique multi-timescale control parameters used for improved energy deposition and reliable 3D laser writing deep inside silicon.
Origine : Fichiers produits par l'(les) auteur(s)
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