Realization of a High Current and Low RON 600V Current Limiting Device

F Nallet (1, 2) , P Godignon (3) , Dominique Planson (1, 2) , Christophe Raynaud (1, 2) , Jean-Pierre P Chante (1, 2)

1 CEGELY - Centre de génie électrique de Lyon
2 INSA Lyon - Institut National des Sciences Appliquées de Lyon
3 CNM - Centro Nacional de Microelectronica [Spain]

The first experimental results of a 600 V 4H-SiC current limiting device are shown. This device limits the current as the bias voltage increases. The forward conduction is ensured by an N type implanted channel (doping species: nitrogen) on top of a P+ implanted layer (doping species: aluminum). The prototypes reach a saturation current density of 900 A.cm-2, with a specific on-resistance of 13 mcm². The 4H-SiC current limiting devices belong to the best set of Accu-MOSFETs devices reported in the literature.

Mots clés: 4H-SiC; MOSFET; Current Limiting Device; Simulation; I-V Characteristics; Forward Current Density; Saturation

Domaines: Energie électrique

F Nallet, P Godignon, Dominique Planson, Christophe Raynaud, Jean-Pierre P Chante. Realization of a High Current and Low RON 600V Current Limiting Device. International Conference on Silicon Carbide and Related Materials, Oct 2001, Tsukuba, Japan. ⟨hal-02975963⟩