Effects of Contact Potential and Sidewall Surface Plane on the Performance of GaN Vertical Nanowire MOSFETs for Low-Voltage Operation

Dong-Hyeok Son (1) , Terirama Thingujam (1) , Jeong-Gil Kim (1) , Dae-Hyun Kim (1) , In Man Kang (1) , Ki-Sik Im (2) , Christoforos Theodorou (3) , Gerard Ghibaudo (3) , Sorin Cristoloveanu (3) , Jung-Hee Lee (1)

1 KNU - Kyungpook National University [Daegu]
2 Kumoh National Institute of Technology [Gumi]
3 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation

Domaines: Micro et nanotechnologies/Microélectronique; Electronique; Analyse de données, Statistiques et Probabilités [physics.data-an]

Dong-Hyeok Son, Terirama Thingujam, Jeong-Gil Kim, Dae-Hyun Kim, In Man Kang, et al.. Effects of Contact Potential and Sidewall Surface Plane on the Performance of GaN Vertical Nanowire MOSFETs for Low-Voltage Operation. IEEE Transactions on Electron Devices, 2020, 67 (4), pp.1547-1552. ⟨10.1109/TED.2020.2975599⟩. ⟨hal-02969751⟩