A 3.5 kV thyristor in 4H-SiC with a JTE periphery

Pierre Brosselard (1, 2, 3) , Thierry Bouchet (4) , Dominique Planson (1, 3) , Sigo Scharnholz (2) , Gontran Pâques (2) , Mihai Lazar (1, 3) , Christophe Raynaud (1, 3) , Jean-Pierre Chante (1, 3) , Emil Spahn (2)

1 CEGELY - Centre de génie électrique de Lyon
2 ISL - Institut franco-allemand de recherches de Saint-Louis
3 INSA Lyon - Institut National des Sciences Appliquées de Lyon
4 IBS - Ion Beam Services

Today, at ISL, there are pulsed power applications under investigation which handle electric energies up to 10 MJ using switching elements as sparc gaps or high power semiconductors based on silicon [1]. Since silicon based technology is reaching its physical limits concerning blocking and power handling capability, GTO thyristors based on SiC are under investigated for compact future pulsed power systems we are investigating [2]. Reaching breakdown voltage of 19 kV [3], the potential of SiC based devices appears very interesting. According to preparatory device simulations using the finite element code MEDICI TM , the developed GTO-thyristors should be able to block voltages up to 6 kV.

Domaines: Energie électrique

Pierre Brosselard, Thierry Bouchet, Dominique Planson, Sigo Scharnholz, Gontran Pâques, et al.. A 3.5 kV thyristor in 4H-SiC with a JTE periphery. European Conference on Silion Carbide and Related Materials (ECSCRM 2004), Sep 2004, Bologne, Italy. ⟨hal-02953080⟩