Switching Loss Estimation Using a Validated Model of 650 V GaN HEMTs

Joao Oliveira (1) , Florent Loiselay (1) , Hervé Morel (2, 3) , Dominique Planson (2, 3)

1 Institut VEDECOM
2 EE - Ampère, Département Energie Electrique
3 INSA Lyon - Institut National des Sciences Appliquées de Lyon

GaN power devices allow building more compact power converters. In order to study these new devices, it is important to measure and estimate switching losses. Therefore, an instrumented PCB is developed including the measurement points needed for this purpose. The parasitic elements of the PCB layout extracted by ANSYS Q3D and the models of the measurement instruments are also included in the simulation model. In this way, by means of a validated model, it will be possible to evaluate the losses in an optimized circuit. Simulation and experimental results are presented to validate the simulation approach.

Mots clés: Gallium Nitride (GaN); Switching losses; Device characterisation; Automotive application

Domaines: Energie électrique

Joao Oliveira, Florent Loiselay, Hervé Morel, Dominique Planson. Switching Loss Estimation Using a Validated Model of 650 V GaN HEMTs. EPE’20 ECCE Europe, Sep 2020, Lyon, France. ⟨10.23919/EPE20ECCEEurope43536.2020.9215793⟩. ⟨hal-02945913⟩