Performance Enhancement in N-Channel Organic Field-Effect Transistors Using Ferroelectric Material as a Gate Dielectric

Benjamin Ramos (1) , Manuel Lopes (1) , David Buso (2) , Marc Ternisien (2)

1 LAPLACE - LAboratoire PLasma et Conversion d'Energie
2 LAPLACE-LM - Lumière et Matière

Domaines: Micro et nanotechnologies/Microélectronique

Benjamin Ramos, Manuel Lopes, David Buso, Marc Ternisien. Performance Enhancement in N-Channel Organic Field-Effect Transistors Using Ferroelectric Material as a Gate Dielectric. IEEE Transactions on Nanotechnology, 2017, 16 (5), pp.773-777. ⟨10.1109/TNANO.2017.2683201⟩. ⟨hal-02939353⟩