Electrical effects of SiNx deposition on GaN MESFETs

B. Boudart (1) , Christophe Gaquière (1) , Y. Guhel (1) , Jean-Claude de Jaeger (1) , M.A. Poisson (2)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 THOMSON-CSF LCR - Thomson-CSF Laboratoire Central de Recherches

The electrical effects of SiNx deposition on GaN MESFETs have been investigated. Significant effects induced from the dielectric coating have been observed depending on the temperature deposition used in the technological process. A power density increase of 30% has been observed after the device passivation performed at 200°C.

Mots clés: silicon compounds; leakage currents; microwave field effect transistors; gallium compounds; passivation; wide band gap semiconductors; power MESFET; III-V semiconductors; plasma CVD

Domaines: Sciences de l'ingénieur [physics]

B. Boudart, Christophe Gaquière, Y. Guhel, Jean-Claude de Jaeger, M.A. Poisson. Electrical effects of SiNx deposition on GaN MESFETs. Electronics Letters, 2001, 37 (8), pp.527 - 528. ⟨10.1049/el:20010324⟩. ⟨hal-02936046⟩