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Broadband supercontinuum generation in nitrogen-rich silicon nitride waveguides using a 300 mm industrial platform

Abstract : We report supercontinuum generation in nitrogen-rich (N-rich) silicon nitride waveguides fabricated through back-end complementary-metal-oxide-semiconductor (CMOS)-compatible processes on a 300 mm platform. By pumping in the anomalous dispersion regime at a wavelength of 1200 nm, two-octave spanning spectra covering the visible and near-infrared ranges, including the O band, were obtained. Numerical calculations showed that the nonlinear index of N-rich silicon nitride is within the same order of magnitude as that of stoichiometric silicon nitride, despite the lower silicon content. N-rich silicon nitride then appears to be a promising candidate for nonlinear devices compatible with back-end CMOS processes.
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https://hal.archives-ouvertes.fr/hal-02932154
Contributor : Christian Lafforgue <>
Submitted on : Tuesday, September 8, 2020 - 2:10:03 PM
Last modification on : Monday, December 7, 2020 - 10:02:39 AM
Long-term archiving on: : Wednesday, December 2, 2020 - 10:57:42 PM

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Christian Lafforgue, Sylvain Guerber, Joan Manel Ramírez, Guillaume Marcaud, Carlos Alonso-Ramos, et al.. Broadband supercontinuum generation in nitrogen-rich silicon nitride waveguides using a 300 mm industrial platform. Photonics Research, OSA Publishing, 2020, 8 (3), pp.352-358. ⟨10.1364/PRJ.379555⟩. ⟨hal-02932154⟩

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