Broadband supercontinuum generation in nitrogen-rich silicon nitride waveguides using a 300 mm industrial platform

Christian Lafforgue (1) , Sylvain Guerber (1) , Joan Manel Ramírez (1) , Guillaume Marcaud (2) , Carlos Alonso-Ramos (2) , Xavier Le Roux (3) , Delphine Marris-Morini (2) , Eric Cassan (3) , Charles Baudot (4) , Frederic Boeuf (4) , Sébastien Cremer (4) , Stéphane Monfray (4) , Laurent Vivien (2)

1 C2N (UMR_9001) - Centre de Nanosciences et Nanotechnologies
2 C2N - Centre de Nanosciences et de Nanotechnologies [Orsay]
3 IEF - Institut d'électronique fondamentale
4 ST-CROLLES - STMicroelectronics [Crolles]

We report supercontinuum generation in nitrogen-rich (N-rich) silicon nitride waveguides fabricated through back-end complementary-metal-oxide-semiconductor (CMOS)-compatible processes on a 300 mm platform. By pumping in the anomalous dispersion regime at a wavelength of 1200 nm, two-octave spanning spectra covering the visible and near-infrared ranges, including the O band, were obtained. Numerical calculations showed that the nonlinear index of N-rich silicon nitride is within the same order of magnitude as that of stoichiometric silicon nitride, despite the lower silicon content. N-rich silicon nitride then appears to be a promising candidate for nonlinear devices compatible with back-end CMOS processes.

Domaines: Optique / photonique

Christian Lafforgue, Sylvain Guerber, Joan Manel Ramírez, Guillaume Marcaud, Carlos Alonso-Ramos, et al.. Broadband supercontinuum generation in nitrogen-rich silicon nitride waveguides using a 300 mm industrial platform. Photonics research, 2020, 8 (3), pp.352-358. ⟨10.1364/PRJ.379555⟩. ⟨hal-02932154⟩