Correlation Between Electromigration-Related Void Volumes and Time-to-Failure by High Resolution X-Ray Tomography and Modeling

Stéphane Moreau (1) , Alexandra Fraczkiewicz (1) , David Bouchu (1) , Pierre Bleuet (1) , Peter Cloetens (2) , Julio Cesar da Silva (3, 2) , Hervé Manzanarez (1) , Fréderic Lorut (4) , Sandrine Lhostis (4)

1 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
2 ESRF - European Synchrotron Radiation Facility
3 NEEL - MRS - Matériaux, Rayonnements, Structure
4 ST-CROLLES - STMicroelectronics [Crolles]

High resolution synchrotron tomography has demonstrated a proportionality between electromigration induced void volume and time-to-failure in hybrid bonding based test structures. A conventional failure by voiding in long feed lines was observed. Process induced bonding voids do not affect reliability of the analyzed samples. Index Terms-Hybrid bonding-based integration, interconnect , electromigration (EM), void volume, time-to-failure, reliability, failure analysis, synchrotron, X-ray nano-tomography, finite element modeling (FEM).

Mots clés: Finite Element Modeling (FEM).; Hybrid bonding-based integration; interconnect; time-tofailure; reliability; electromigration (EM); failure analysis; void volume; synchrotron; X-ray nanotomography

Domaines: Micro et nanotechnologies/Microélectronique; Matériaux

Stéphane Moreau, Alexandra Fraczkiewicz, David Bouchu, Pierre Bleuet, Peter Cloetens, et al.. Correlation Between Electromigration-Related Void Volumes and Time-to-Failure by High Resolution X-Ray Tomography and Modeling. IEEE Electron Device Letters, 2019, 40 (11), pp.1808-1811. ⟨10.1109/LED.2019.2945089⟩. ⟨hal-02879698⟩