Selective growth of p-doped SiC on diamond substrate by vapor–liquid–solid mechanism from Al–Si liquid phase

A. Vo-Ha (1) , D. Carole (1) , Mihai Lazar (2) , Dominique Tournier (2) , F. Cauwet (1) , V. Souliere (1) , Dominique Planson (2) , C. Brylinski (1) , G. Ferro (1)

1 LMI - Laboratoire des Multimatériaux et Interfaces
2 EE - Ampère, Département Energie Electrique

This works deals with the localized growth of SiC on monocrystalline (100) diamond surface. It describes an attempt of selective epitaxy using vapor–liquid–solid (VLS) transport. Patterns of Al–Si stacking were melted and fed by propane. Morphology, structure and doping type of the SiC deposit were evaluated. The deposit was found to be successfully selective but polycrystalline, with the 3C-SiC polytype. Study of the initial step of growth showed that SiC nucleation occurs without any propane addition but just through the interaction of liquid Al–Si and diamond via a dissolution/precipitation process. The VLS transport mainly assists the growth of these nuclei by providing a secondary carbon source. This explains the random nucleation and the polycrystalline growth. Despite this, the deposit was dense enough to perform some preliminary electrical measurements which show encouraging results.

Mots clés: Selective epitaxy; VLS growth; Diamond; p-Type doping; Silicon carbide

Domaines: Chimie; Cristallographie; Matériaux

A. Vo-Ha, D. Carole, Mihai Lazar, Dominique Tournier, F. Cauwet, et al.. Selective growth of p-doped SiC on diamond substrate by vapor–liquid–solid mechanism from Al–Si liquid phase. Diamond and Related Materials, 2013, 35, pp.24-28. ⟨10.1016/j.diamond.2013.03.007⟩. ⟨hal-02863887⟩