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High-speed germanium pin photodiodes integrated on silicon-on-insulator nanophotonic waveguides

Abstract : Hetero-structured silicon-germanium-silicon photodetectors operating under low-reverse-voltages with high responsivity, fast response, and low dark-current levels are reported. A bit-error-rate of 10-9 is experimentally achieved for conventional data rates of 10, 20, and 25 Gbps, providing optical power sensitivities of-13.9,-12.7, and-11.3 dBm.
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Contributor : Daniel Benedikovic <>
Submitted on : Friday, April 10, 2020 - 10:58:35 AM
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D. Benedikovic, L. Virot, G Aubin, J.-M Hartmann, B. Szelag, et al.. High-speed germanium pin photodiodes integrated on silicon-on-insulator nanophotonic waveguides. 16th IEEE International Conference on Group IV Photonics, Aug 2019, Singapore, Singapore. ⟨10.1109/GROUP4.2019.8926080⟩. ⟨hal-02539561⟩

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