High-speed germanium pin photodiodes integrated on silicon-on-insulator nanophotonic waveguides

D. Benedikovic (1) , L. Virot (2) , G Aubin (1) , J.-M Hartmann (2) , B. Szelag (2) , F Amar (1) , X Le Roux (1) , C Alonso-Ramos (1) , P Crozat (1) , D Marris-Morini (1) , E Cassan (1) , C Baudot (3) , F Boeuf (3) , J.-M Fédéli (2) , C Kopp (2) , L Vivien (4)

1 C2N (UMR_9001) - Centre de Nanosciences et Nanotechnologies
2 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
3 STMicroelectronics
4 C2N - Centre de Nanosciences et de Nanotechnologies [Orsay]

Hetero-structured silicon-germanium-silicon photodetectors operating under low-reverse-voltages with high responsivity, fast response, and low dark-current levels are reported. A bit-error-rate of 10-9 is experimentally achieved for conventional data rates of 10, 20, and 25 Gbps, providing optical power sensitivities of-13.9,-12.7, and-11.3 dBm.

Mots clés: silicon nanophotonics; germanium; silicon-on- insulator; optical photodetectors; complementary metal-oxide- semiconductor technology

Domaines: Optique / photonique; Micro et nanotechnologies/Microélectronique

D. Benedikovic, L. Virot, G Aubin, J.-M Hartmann, B. Szelag, et al.. High-speed germanium pin photodiodes integrated on silicon-on-insulator nanophotonic waveguides. 16th IEEE International Conference on Group IV Photonics, Aug 2019, Singapore, Singapore. ⟨10.1109/GROUP4.2019.8926080⟩. ⟨hal-02539561⟩