Very low R/sub ON/ measured on 4H-SiC accu-MOSFET high power device

F. Nallet (1, 2) , P. Godignon (3) , Dominique Planson (1, 2) , Christophe Raynaud (1, 2) , J.P. P Chante (1, 2)

1 CEGELY - Centre de génie électrique de Lyon
2 INSA Lyon - Institut National des Sciences Appliquées de Lyon
3 CNM - Centro Nacional de Microelectronica [Spain]

This paper describes the I-V characteristics obtained from a 4H-SiC current limiting device. Some specific aspects of the specific on-resistance are discussed in simulation with the DESSIS ISE software. The device behaviors place it in the field of the best Implanted Channel MOSFET (IC-MOSFET) obtained in the literature. The best on-resistance measured is 13 mWcm 2 and the saturation current density reaches 900 Acm-2 .

Mots clés: 4H-SiC; MOSFET; Current Limiting Device; I-V Characteristics; Low Specific On-Resistance; Forward Current Density; Serial Protection

Domaines: Energie électrique

F. Nallet, P. Godignon, Dominique Planson, Christophe Raynaud, J.P. P Chante. Very low R/sub ON/ measured on 4H-SiC accu-MOSFET high power device. 14th International Symposium on Power Semiconductor Devices and ICs, Jun 2002, Sante Fe, United States. pp.209-212, ⟨10.1109/ISPSD.2002.1016208⟩. ⟨hal-02471269⟩