Impact of Hot Carrier Aging on the Performance of Triple-Gate Junctionless MOSFETs

Theodoros Oproglidis (1) , Theano Karatsori (2) , Christoforos Theodorou (2) , Andreas Tsormpatzoglou (1) , Sylvain Barraud (3) , Gérard Ghibaudo (2) , Charalabos Dimitriadis (1)

1 Aristotle University of Thessaloniki, Department of Physics
2 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation
3 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information

In this article, we investigate the impact of the hot carrier (HC) aging on the performance of nanoscale n-channel triple-gate junctionless MOSFETs with channel length varying from 95 down to 25 nm. The devices were electrically stressed in the ON-state region of operation at fixed gate voltage Vg=1.8 V and drain bias Vd=1.8 V, with the stress time being a variable parameter. The device degradation was monitored through the relative change with stress time of the threshold voltage, subthreshold swing, linear drain current, low-field mobility, series resistance, and gate current. For relatively long-channel transistors ( L=95 nm), the threshold voltage and the subthreshold swing remain almost unchanged, whereas the ON-state drain current is degraded showing a good correlation with the series resistance degradation, caused by HC-induced damage in the drain region. For short-channel transistor ( L=45 nm), the HC-induced damage is extended in the channel region: interface traps are generated, exhibiting good correlation with both threshold voltage and low-field mobility degradations. For the very short-channel device ( L=25 nm), after long stress time, the HC-induced interface degradation is severe, causing a continuous increase of the ideality factor with increasing the gate voltage.

Mots clés: Degradation mechanisms; hot-carriers (HCs); junctionless (JL); triple-gate (TG) MOSFETs; Index Terms-Degradation mechanisms; hot-carriers; junctionless; triple-gate MOSFETs

Domaines: Micro et nanotechnologies/Microélectronique; Electronique

Theodoros Oproglidis, Theano Karatsori, Christoforos Theodorou, Andreas Tsormpatzoglou, Sylvain Barraud, et al.. Impact of Hot Carrier Aging on the Performance of Triple-Gate Junctionless MOSFETs. IEEE Transactions on Electron Devices, 2020, 67 (2), pp.424-429. ⟨10.1109/TED.2019.2958457⟩. ⟨hal-02461975⟩