Characterization of a 4H-SiC High Power Density Controlled Current Limiter

Dominique Tournier (1, 2) , Xavier Jorda (3) , Josep Montserrat (4, 3) , Dominique Planson (1, 2) , Christophe Raynaud (1, 2) , M. Lazar (1, 2) , Jean-Pierre P Chante (1, 2) , F. Sarrus (5)

1 CEGELY - Centre de génie électrique de Lyon
2 INSA Lyon - Institut National des Sciences Appliquées de Lyon
3 CNM - Centro Nacional de Microelectronica [Spain]
4 IMB-CNM - Instituto de Microelectrònica de Barcelona
5 Ferraz-Shawmut

Most of silicon devices such as Schottky diode, MOSFET, MESFET have been realized in SiC and show good electrical and thermal characteristics [1]. Considering fault current limiters for serial protection, a lot of structures exists [2, 3], from conventional fuses to other complex systems such as circuit breakers, mechanical switches. Up to now, few specific SiC-current limiter were described [4, 5]. This paper presents experimental characterization of a bi-directional current limiter structure based on a vertical SiC VJFET.

Mots clés: Current limiter; JFET

Domaines: Energie électrique

Dominique Tournier, Xavier Jorda, Josep Montserrat, Dominique Planson, Christophe Raynaud, et al.. Characterization of a 4H-SiC High Power Density Controlled Current Limiter. European Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, Linköping, Sweden. ⟨hal-02458130⟩