Growth and Memory Effect of Ge in GaAs Epilayers Grown in UHV Environment Using IBGe

Alex Brice Poungoué Mbeunmi (1) , Roxana Arvinte (1) , Mohammad Reza Aziziyan (2) , Richard A Arès (3, 1, 2) , Simon Fafard (3, 2) , Abderraouf A Boucherif (3, 2)

1 3IT - Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke]
2 LN2 - Laboratoire Nanotechnologies Nanosystèmes
3 UdeS - Université de Sherbrooke

Domaines: Sciences de l'ingénieur [physics]

Alex Brice Poungoué Mbeunmi, Roxana Arvinte, Mohammad Reza Aziziyan, Richard A Arès, Simon Fafard, et al.. Growth and Memory Effect of Ge in GaAs Epilayers Grown in UHV Environment Using IBGe. ECS Transactions, 2019, 93 (1), pp.113-116. ⟨10.1149/09301.0113ecst⟩. ⟨hal-02453652⟩