Design of Non-Metastable SRAM Cells in 28 nm CMOS Technology

F. Crescioli (1) , L. Frontini , V. Liberali , A. Stabile

1 LPNHE (UMR_7585) - Laboratoire de Physique Nucléaire et de Hautes Énergies

This paper presents the design of an SRAM cell in 28 nm, specifically designed to avoid metastability at start-up. Metastable operation is avoided by unbalancing the size of transistors. Extensive simulations have confirmed that the probability of metastable operation is greatly reduced.

Mots clés: CMOS technology; MOSFET; Layout; Monte Carlo methods; SRAM cells

Domaines: Instrumentations et Détecteurs [physics.ins-det]

F. Crescioli, L. Frontini, V. Liberali, A. Stabile. Design of Non-Metastable SRAM Cells in 28 nm CMOS Technology. 2019 IEEE 31st International Conference on Microelectronics, Sep 2019, Nis, Serbia. pp.243-246, ⟨10.1109/MIEL.2019.8889606⟩. ⟨hal-02449077⟩